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| (R) VND05BSP ISO HIGH SIDE SMART POWER SOLID STATE RELAY TYPE VND05BSP s V DSS 40 V R DS(on ) 0.2 I OUT 1.6 A V CC 26 V s s s s s s OUTPUT CURRENT (CONTINUOUS): 9A @ Tc = 85oC PER CHANNEL 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION OPEN DRAIN DIAGNOSTIC OUTPUT INDUCTIVE LOAD FAST DEMAGNETIZATION VERY LOW STAND-BY POWER DISSIPATION 10 1 DESCRIPTION The VND05BSP is a monolithic device made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip from over temperature and short circuit. The status output provides an indication of open load in on state, open load in off state, overtemperature conditions and stuck-on to VCC. BLOCK DIAGRAM PowerSO-10 April 2001 1/9 VND05BSP ABSOLUTE MAXIMUM RATING Symbol V (BR)DSS I OUT IR I IN -V CC I STAT V ESD P tot Tj T stg Parameter Drain-Source Breakdown Voltage Output Current (cont.) at T c = 85 o C o Value 40 9 9 -9 10 -4 10 2000 59 -40 to 150 -55 to 150 Unit V A A A mA V mA V W o o IOUT (RMS) RMS Output Current at T c = 85 C and f > 1Hz Reverse Output Current at T c = 85 C Input Current Reverse Supply Voltage Status Current Electrostatic Discharge (1.5 k, 100 pF) Power Dissipation at T c = 25 o C Junction Operating Temperature Storage Temperature o C C CONNECTION DIAGRAMS CURRENT AND VOLTAGE CONVENTIONS 2/9 VND05BSP THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient ($) Max Max 2.1 50 o o C/W C/W ($) When mounted using minimum recommended pad size on FR-4 board o ELECTRICAL CHARACTERISTICS (8 < VCC < 16 V; -40 Tj 125 C unless otherwise specified) POWER Symbol V CC In(*) R on IS V DS(MAX) Ri Parameter Supply Voltage Nominal Current On State Resistance Supply Current o Test Conditions T c = 85 C V DS(on) 0.5 V CC = 13 V I OUT = I n V CC = 13 V Off State o Min. 6 1.6 0.13 Typ. 13 Max. 26 2.6 0.2 Unit V A A V K T j = 25 o C VCC = 13 V V CC = 13 V o T j = 25 o C T j = 85 C 35 1.44 5 10 100 2.3 20 Maximum Voltage Drop I OUT = 7.5 A Output to GND internal Impedance T j = 25 C SWITCHING Symbol td(on) (^) t r (^) td(off) (^) t f (^) (di/dt) on (di/dt)off Parameter Turn-on Delay Time Of Output Current Rise Time Of Output Current Test Conditions R out = 5.4 R out = 5.4 Min. 5 10 10 10 0.003 0.005 Typ. 25 50 75 35 Max. 200 180 250 180 0.1 0.1 Unit s s s s A/s A/s Turn-off Delay Time Of R out = 5.4 Output Current Fall Time Of Output Current Turn-on Current Slope Turn-off Current Slope R out = 5.4 R out = 5.4 R out = 5.4 LOGIC INPUT Symbol VIL V IH VI(hyst.) I IN V ICL Parameter Input Low Level Voltage Input High Level Voltage Input Hysteresis Voltage Input Current Input Clamp Voltage V IN = 5 V T j = 25 o C 5 I IN = 10 mA I IN = -10 mA 3.5 0.2 0.9 30 6 -0.7 Test Conditions Min. Typ. Max. 1.5 (*) 1.5 100 7 Unit V V V A V V 3/9 VND05BSP ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS Symbol VSTAT V USD V SCL T TSD T SD(hyst .) TR V OL I OL t povl t pol Parameter Status Voltage Output Low Under Voltage Shut Down Status Clamp Voltage Thermal Shut-down Temperature Thermal Shut-down Hysteresis Reset Temperature Open Voltage Level Open Load Current Level Status Delay Status Delay Off-State (note 2) On-State (note 3) (note 3) 50 125 2.5 5 5 500 4 5 180 10 2500 I STAT = 10 mA I STAT = -10 mA Test Conditions I STAT = 1.6 mA 3.5 5 140 4.5 6 -0.7 160 Min. Typ. Max. 0.4 6 7 180 50 Unit V V V V o C C C o o V mA s s (*) In= Nominal current according to ISO definition for high side automotive switch (see note 1) NOTE = (^) See switching time waveform NOTE = (*) The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. NOTE = note 1: The Nominal Current is the current at Tc = 85 oC for battery voltage of 13V which produces a voltage drop of 0.5 V NOTE = note 2: IOL(off) = (VCC -VOL)/ROL note 3:tpovl tpol: ISO definition. Note 2 Relevant Figure Note 3 Relevant Figure 4/9 VND05BSP Switching Time Waveforms FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open load in on-state, open load in off-state, over temperature conditions and stuck-on to VCC. From the falling edge of the input signal, the status output, initially low to signal a fault condition (overtemperature or open load on-state), will go back to a high state with a different delay in case of overtemperature (tpovl) and in case of open open load (tpol) respectively. This feature allows to discriminate the nature of the detected fault. To protect the device against short circuit and over current condition, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When this temperature returns to 125 oC the switch is automatically turned on again. In short circuit the protection reacts with virtually no delay, the sensor being located inside the Power MOS area. An internal function of the devices ensures the fast demagnetization of inductive loads with a typical voltage (Vdemag) of -18V. This function allows to greatly reduces the power dissipation according to the formula: Pdem = 0.5 * Lload *(load)2 * [(VCC+Vdemag)/Vdemag] *f where f = switching frequency and Vdemag = demagnetization voltage. The maximum inductance which causes the chip temperature to reach the shut-down temperature in a specified thermal environment is a function of the load current for a fixed VCC, Vdemag and f according to the above formula. In this device if the GND pin is disconnected, with VCC not exceeding 16V, it will switch off. PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig.3). The consequences of the voltage drop across this diode are as follows: If the input is pulled to power GND, a negative voltage of -Vf is seen by the device. (Vil, Vih thresholds and Vstat are increased by Vf with respect to power GND). The undervoltage shutdown level is increa- sed by Vf. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit in fig. 3), which becomes the common signal GND for the whole control board avoiding shift of Vih, Vil and Vstat. This solution allows the use of a standard diode. 5/9 VND05BSP TRUTH TABLE INPUT 1 Normal Operation L H L H X INPUT 2 L H H L X X H X L H L X L H L OUTPUT 1 OUTPUT 2 L H L H L L X H L X L H H X L L H H L L X L X L H L X L H H DIAGNOSTIC H H H H H L L L L(**) L L(**) L L L L Under-voltage Thermal Shutdown Open Load Channel 1 Channel 2 Channel 1 Channel 2 H X H L X L H L X L Output Shorted to V CC Channel 1 Channel 2 (**) with additional external resistor. Figure 1: Waveforms 6/9 VND05BSP Figure 2: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection Figure 3: Typical Application Circuit With Separate Signal Ground 7/9 VND05BSP PowerSO-10TM MECHANICAL DATA DIM. A A (*) A1 B B (*) C C (*) D D1 E E2 E2 (*) E4 E4 (*) e F F (*) H H (*) h L L (*) (*) (*) Muar only POA P013P mm. MIN. 3.35 3.4 0.00 0.40 0.37 0.35 0.23 9.40 7.40 9.30 7.20 7.30 5.90 5.90 1.27 1.25 1.20 13.80 13.85 0.50 1.20 0.80 0 2 1.80 1.10 8 8 0.047 0.031 0 2 1.35 1.40 14.40 14.35 0.049 0.047 0.543 0.545 TYP MAX. 3.65 3.6 0.10 0.60 0.53 0.55 0.32 9.60 7.60 9.50 7.60 7.50 6.10 6.30 MIN. 0.132 0.134 0.000 0.016 0.014 0.013 0.009 0.370 0.291 0.366 0.283 0.287 0.232 0.232 inch TYP. MAX. 0.144 0.142 0.004 0.024 0.021 0.022 0.0126 0.378 0.300 0.374 300 0.295 0.240 0.248 0.050 0.053 0.055 0.567 0.565 0.002 0.070 0.043 8 8 B 0.10 A B 10 H E E2 E E4 1 SEATING PLANE e 0.25 B DETAIL "A" A C D = D1= = = SEATING PLANE h A F A1 A1 L DETAIL "A" P095A 8/9 VND05BSP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 9/9 |
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